Controlling the spatial distribution of dopants in graphene is the gateway to the realization of graphene-based electronic components. Here, it is shown that a submonolayer of self-assembled physisorbed molecules can be used as a resist during a post-synthesis nitrogen doping process to realize a nanopatterning of nitrogen dopants in graphene. The resulting formation of domains with different nitrogen concentrations allows obtaining n\u2013n\u2019 and p\u2013n junctions in graphene. A scanning tunneling microscopy is used to measure the electronic properties of the junctions at the atomic scale and reveal their intrinsic width that is found to be \u22487 nm corresponding to a sharp junction regime.<\/p>\n\n\n